- 112 - mbrf1035 - mbrf10150 isolated 10.0 amps. schottky barrier rectifiers features plastic material used carries underwriters laboratory classifications 94v-0 metal silicon junction, majority carrier conduction low power loss, high efficiency high current capability, low forward voltage drop high surge capability for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications guardring for overvoltage protection high temperature soldering guaranteed: 260 o c/10 seconds,0.25?(6.35mm)from case mechanical data cases: jedec to-220ac molded plastic body terminals: pure tin plated, lead free. solderable p er mil-std-750, method 2026 polarity: as marked mounting position: any mounting torque: 5 in. - lbs. max weight: 0.08 ounce, 2.24 grams maximum ratings and electrical characteristics rating at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol mbrf 1035 mbrf 1045 mbrf 1050 mbrf 1060 mbrf 1090 mbrf 10100 mbrf 10150 units maximum recurrent peak reverse voltage v rrm 35 45 50 60 90 100 150 v maximum rms voltage v rms 24 31 35 42 63 70 105 v maximum dc blocking voltage v dc 35 45 50 60 90 100 150 v maximum average forward rectified current at tc=125 o c i (av) 10 a peak repetitive forward current (rated v r , square wave, 20khz) at tc=125 o c i frm 32 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 150 a peak repetitive reverse surge current (note 1) i rrm 1.0 0.5 a maximum instantaneous forward voltage at: (note 2) i f =10a, t c =25 o c i f =10a, t c =125 o c i f =20a, t c =25 o c i f =20a, t c =125 o c v f 0.70 0.57 0.84 0.72 0.80 0.70 0.95 0.85 0.85 0.71 1.05 v 0.1 maximum instantaneous reverse current @ tc =25 o c at rated dc blocking voltage @ tc=125 o c (note 2) i r 15 10 0.1 6.0 ma ma voltage rate of change (rated v r ) dv/dt 10,000 v/us typical junction capacitance cj 500 pf m aximum t ypical t hermal resistance(note 3) r jc 3.0 o c/w operating junction temperature range t j -65 to +150 o c storage temperature range t stg -65 to +175 o c notes : 1. 2.0us pulse width, f=1.0 khz 2. pulse test: 300us pulse width, 1% duty cycle 3. thermal resistance from junction to case per leg wi th heatsink size of 2 in x 3 in x 0.25 in al-plate. http://www.luguang.cn mail:lge@luguang.cn 1 2 pi n 16 . 5 0 .3 10. 2 0. 2 15 .2 0 .5 4. 0 0. 3 13. 5 0.5 5. 0 0 . 1 1. 4 0 . 1 0. 6 0 . 1 4 . 5 0. 2 3. 1 +0 . 2 -0 . 1 |? 3 . 3 0 .1 |? 3 . 2 0 . 2 8 . 2 0.2 2. 6 0. 2 0 . 6 0. 1 ito - 220ac dimensions in millimeters
fig.2- maximum non-repetitive forward surge current peak for ward surge current . (a) 1 0.1 10 100 25 50 75 125 100 150 175 number of cycles at 60hz fig.3- typical instantaneous forward characteristics instantaneous for ward current . (a) 0.6 0.8 1.0 1.1 0.9 0.7 0.5 0.4 0.3 0.2 0.1 0 1.2 0.1 0.01 1 10 40 forward voltage. (v) tj=25 c 0 tj=125 c 0 fig.4- typical reverse characteristics instantaneous reverse current . (ma) 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage. (%) 0.001 0.1 0.01 1 10 50 mbrf1035-MBRF1045 mbrf1050-mbrf10150 tj=125 c 0 tj=25 c 0 tj=75 c 0 fig.6- typical transient thermal characteristics transient thermal impedance. ( c/w) o 1 0.01 0.1 10 100 0.1 10 1 100 t, pulse duration. (sec) fig.5- typical junction capacitance junction cap acitance.(pf) 0.1 1.0 10 100 100 1,000 5,000 reverse voltage. (v) tj=25 c f=1.0mhz vsig=50mvp-p 0 mbrf1035-MBRF1045 mbrf1050-mbrf1060 mbrf1090-mbrf10150 fig.1- forward current derating curve average for ward current . (a) 0 50 100 150 0 2 4 6 8 12 10 case temperature. ( c) o resistive or inductive load mbrf1035-MBRF1045 mbrf1050-mbrf10150 pulse width=300 s 1% duty cycle mbrf1035-MBRF1045 mbrf1050-mbrf1060 mbrf1090-mbrf10150 500 http://www.luguang.cn mail:lge@luguang.cn mbrf1035 - mbrf10150
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